Optical studies of bulk and homoepitaxial films of III-V nitride semiconductorsFREITAS, Jaime A.Journal of crystal growth. 2005, Vol 281, Num 1, pp 168-182, issn 0022-0248, 15 p.Conference Paper

Properties of the state of the art of bulk III―V nitride substrates and homoepitaxial layersFREITAS, Jaime A.Journal of physics. D, Applied physics (Print). 2010, Vol 43, Num 7, issn 0022-3727, 073001.1-073001.13Article

Bulk Nitride Workshop. The international workshop on bulk semiconductors IIIFREITAS, Jaime A; SITAR, Zlatko.Journal of crystal growth. 2005, Vol 281, Num 1, issn 0022-0248, 204 p.Conference Proceedings

The 7th International Workshop on Bulk Nitride Semiconductors (IWBNS VII)FREITAS, Jaime; SITAR, Zlatko; KUMAGAI, Yoshinao et al.Journal of crystal growth. 2012, Vol 350, Num 1, issn 0022-0248, 100 p.Conference Proceedings

Proceedings of the 4th International Workshop on Bulk Nitride Semiconductors IV (IWBNS): 17-22 October 2006, Makino, Shiga, JapanFREITAS, Jaime A; HANSER, Drew; KOUKITOU, Akinori et al.Journal of crystal growth. 2007, Vol 305, Num 2, issn 0022-0248, 124 p.Conference Proceedings

Penetration depth profiling of proton-irradiated 4H-SiC at 6 MeV and 8 MeV by micro-Raman spectroscopyKIM, Hong-Yeol; KIM, Jihyun; FREITAS, Jaime A et al.Applied surface science. 2013, Vol 270, pp 44-48, issn 0169-4332, 5 p.Article

Residual impurities in GaN substrates and epitaxial layers grown by various techniquesMURTHY, Madhu; FREITAS, Jaime A; KIM, Jihyun et al.Journal of crystal growth. 2007, Vol 305, Num 2, pp 393-398, issn 0022-0248, 6 p.Conference Paper

Crystal polarity role in Mg incorporation during GaN solution growthFREITAS, Jaime A; FEIGELSON, Boris N; ANDERSON, Travis J et al.Journal of crystal growth. 2014, Vol 403, pp 90-95, issn 0022-0248, 6 p.Conference Paper

8th International Workshop on Bulk Nitrides Semiconductors (IWBNS VIII)FREITAS, Jaime A; MEISSNER, Elke; PASKOVA, Tanya et al.Journal of crystal growth. 2014, Vol 403, issn 0022-0248, 131 p.Conference Proceedings

Bulk nitride growth and related techniques. International Specialist Meeting, Foz do Iguaç´u, Brazil, 12-16 November 2000KUECH, T. F; BABCOCK, S. E; FREITAS, Jaime A et al.Journal of crystal growth. 2001, Vol 231, Num 3, issn 0022-0248, 124 p.Conference Proceedings

Zinc-blende and wurtzite Al_xGa_1―xN bulk crystals grown by molecular beam epitaxyNOVIKOV, S. V; STADDON, C. R; LUCKERT, F et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 80-84, issn 0022-0248, 5 p.Conference Paper

Development of GaN wafers for solid-state lighting via the ammonothermal methodLETTS, Edward; HASHIMOTO, Tadao; IKARI, Masanori et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 66-68, issn 0022-0248, 3 p.Conference Paper

Preparation of freestanding AlN substrates by hydride vapor phase epitaxy using hybrid seed substratesNAGASHIMA, Toru; HAKOMORI, Akira; YANAGI, Hiroyuki et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 75-79, issn 0022-0248, 5 p.Conference Paper

The Proceedings of the International Workshop on Bulk Nitride Semiconductors V (IWBNS5)FREITAS, Jaime A; HANSER, Drew; DA SILVA, Antonio F et al.Journal of crystal growth. 2008, Vol 310, Num 17, issn 0022-0248, 129 p.Conference Proceedings

Control of the free carrier concentrations in a Si-doped freestanding GaN grown by hydride vapor phase epitaxyHYUN JONG PARK; KIM, Hong-Yeol; JUN YOUNG BAE et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 85-88, issn 0022-0248, 4 p.Conference Paper

Hardness control for improvement of dislocation reduction in HVPE-grown freestanding GaN substratesFUJIKURA, Hajime; OSHIMA, Yuichi; MEGRO, Takeshi et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 38-43, issn 0022-0248, 6 p.Conference Paper

Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaNFEIGELSON, B. N; ANDERSON, T. J; ABRAHAM, M et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 21-26, issn 0022-0248, 6 p.Conference Paper

Formation of AlN on sapphire surfaces by high-temperature heating in a mixed flow of H₂ and N₂KUMAGAI, Yoshinao; IGI, Takahiro; ISHIZUKI, Masanari et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 60-65, issn 0022-0248, 6 p.Conference Paper

Growth and strain characterization of high quality GaN crystal by HVPEHUIYUAN GENG; SUNAKAWA, Haruo; SUMI, Norihiko et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 44-49, issn 0022-0248, 6 p.Conference Paper

Growth of GaN boules via vertical HVPERICHTER, E; GRÜNDER, M; NETZEL, C et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 89-92, issn 0022-0248, 4 p.Conference Paper

Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxyFREITAS, J. A; CULBERTSON, J. C; MASTRO, M. A et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 33-37, issn 0022-0248, 5 p.Conference Paper

AlN homoepitaxial growth on sublimation-AlN substrate by low-pressure HVPENOMURA, Takuya; OKUMURA, Kenta; MIYAKE, Hideto et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 69-71, issn 0022-0248, 3 p.Conference Paper

Growth of GaN:Mg crystals by high nitrogen pressure solution method in multi-feed―seed configurationGRZEGORY, I; BOCKOWSKI, M; LUCZNIK, B et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 50-55, issn 0022-0248, 6 p.Conference Paper

On the formation of vacancy defects in III-nitride semiconductorsTUOMISTO, F; MÄKI, J.-M; RAUCH, C et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 93-97, issn 0022-0248, 5 p.Conference Paper

Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxyFREITAS, J. A; MASTRO, M. A; GLASER, E. R et al.Journal of crystal growth. 2012, Vol 350, Num 1, pp 27-32, issn 0022-0248, 6 p.Conference Paper